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MITSUBISHI CM150DY-24A IGBT MODULE 1.2kV 150A 960W

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MITSUBISHI CM150DY-24A IGBT MODULE 1.2kV 150A 960W

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Brand Name : MITSUBISHI

Place of Origin : China

Model Number : CM150DY-24A

Payment Terms : T/T

Collector-Emitter Voltage (Vces) : 1200 V

Continuous Collector Current (Ic) : 150A

Collector Current (Icp) : 300A

Maximum Power Dissipation (Pc) : 960W

Collector-Emitter Saturation Voltage (Vce(sat)) : 2.2V (typical)

Gate-Emitter Threshold Voltage (Vge(th)) : 5.0V (typical)

Gate-Emitter Leakage Current : 500nA

Gate-Emitter Voltage (Vge) : ±20V

Minimum Operating Temperature : -40°C

Maximum Junction Temperature (Tjmax) : +150°C

Storage Temperature (Tstg) : -40°C to +125°C

-40°C to +125°C : 0.2kg

Module Dimensions (W x D x H) : 62mm x 30mm x 17mm

Maximum Gate Emitter Voltage : 20V

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Product Description:

MITSUBISHI CM150DY-24A IGBT module, a reliable and high-performance solution for your power electronics needs. This module features a dual IGBT configuration, making it suitable for a wide range of applications.

With a voltage rating of 1200V, the CM150DY-24A offers robust and efficient power control. It is capable of handling currents up to 150A, allowing for reliable operation in demanding conditions. Whether you're working on motor drives, inverters, or other power conversion systems, this module provides excellent performance and reliability.

The CM150DY-24A IGBT module is designed to handle high power dissipation, ensuring optimal thermal management. Its compact and rugged design enables easy integration into various systems, while also providing durability and long-term reliability.

MITSUBISHI CM150DY-24A IGBT MODULE 1.2kV 150A 960WMITSUBISHI CM150DY-24A IGBT MODULE 1.2kV 150A 960WMITSUBISHI CM150DY-24A IGBT MODULE 1.2kV 150A 960WMITSUBISHI CM150DY-24A IGBT MODULE 1.2kV 150A 960WMITSUBISHI CM150DY-24A IGBT MODULE 1.2kV 150A 960W


Product Tags:

silicone insulated gate bipolar transistors

      

Insulated Gate Bipolar Transistor Normal Temperature

      

silicon bipolar transistor

      
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